IBM develops manufacturing process for 5nm processors

IBM has developed[1] a 5nm semiconductor manufacturing process which uses a new transistor design. The manufacturing process uses a gate-all-round transistor design instead of the FinFET structure implemented in modern chips. The transistor design consists of a trio of silicon nanosheets wrapped around a gate material, and promises better scaling at lower process nodes than FinFET transistors.

“Compared to the leading edge 10nm technology available in the market, a nanosheet-based 5nm technology can deliver 40% performance enhancement at fixed power, or 75% power savings at matched performance,” said IBM.

The company said the power savings conferred by its 5nm chip design could allow smartphones to last up to three-times longer on a single charge.

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Now read: IBM supercomputers to improve weather forecasts[2]


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